Panasonic SFT1446-TL-H

Description
Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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Description
Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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Datasheet
Datasheet Summary
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N-Channel Power MOSFET for 60V operation, 20A continuous drain current, and 51mΩ maximum on-state resistance in a TP-FA package with TO-252 dimensions, designed for surface-mount applications with tape-and-reel packaging. The device features a 4V gate drive threshold, 750pF input capacitance, and a thermally enhanced structure. It is halogen-free compliant and meets RoHS requirements. Switching performance includes a total gate charge of 16nC, with turn-on and turn-off delays of 8.5ns and 60ns respectively. Thermal performance supports up to 150°C channel temperature with 23W power dissipation at 25°C case temperature.

Datasheet Summary
Powered by GS/AI

N-Channel Power MOSFET for 60V operation, 20A continuous drain current, and 51mΩ maximum on-state resistance in a TP-FA package with TO-252 dimensions, designed for surface-mount applications with tape-and-reel packaging. The device features a 4V gate drive threshold, 750pF input capacitance, and a thermally enhanced structure. It is halogen-free compliant and meets RoHS requirements. Switching performance includes a total gate charge of 16nC, with turn-on and turn-off delays of 8.5ns and 60ns respectively. Thermal performance supports up to 150°C channel temperature with 23W power dissipation at 25°C case temperature.

Suppliers

Company
Product
Description
Supplier Links
 - SFT1446-TL-H - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number SFT1446-TL-H
Polarity N-Channel
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