Panasonic TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NP0G3D200A NP0G3D200A

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 025640-NP0G3D200A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz, 80MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k, 22k Resistor - Emitter Base (R2) (Ohms): 4.7k, 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSSMini6-F1 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 20 @ 5mA, 10V / 80 @ 5mA, 10V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 025640-NP0G3D200A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz, 80MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k, 22k Resistor - Emitter Base (R2) (Ohms): 4.7k, 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSSMini6-F1 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 20 @ 5mA, 10V / 80 @ 5mA, 10V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NP0G3D200A - 025640-NP0G3D200A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NP0G3D200A
025640-NP0G3D200A
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NP0G3D200A 025640-NP0G3D200A
Manufacturer: Panasonic Electronic Components Win Source Part Number: 025640-NP0G3D200A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz, 80MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k, 22k Resistor - Emitter Base (R2) (Ohms): 4.7k, 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSSMini6-F1 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 20 @ 5mA, 10V / 80 @ 5mA, 10V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 025640-NP0G3D200A
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz, 80MHz
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k, 22k
Resistor - Emitter Base (R2) (Ohms): 4.7k, 47k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SSSMini6-F1
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 20 @ 5mA, 10V / 80 @ 5mA, 10V
Maximum Power Dissipation: 125mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor 293-NP0G3D200A
TRANS PREBIAS NPN/PNP SSSMINI6 Product overview: NP0G3D200A from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NP0G3D200A can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN/PNP SSSMINI6 Product overview: NP0G3D200A from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NP0G3D200A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NP0G3D200A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NP0G3D200A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NP0G3D200A
TRANS PREBIAS NPN/PNP SSSMINI6

TRANS PREBIAS NPN/PNP SSSMINI6

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 025640-NP0G3D200A 293-NP0G3D200A NP0G3D200A
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NP0G3D200A Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP; 1 NPN, 1 PNP - Pre-Biased (Dual)
Package Type SOT3; SSSMini6-F1
IC(max) 80 milliamps 80 milliamps
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