Panasonic ECH8674-TL-H

Description
Power Field-Effect Transistor
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Description
Power Field-Effect Transistor
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Datasheet
Datasheet Summary
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ECH8674-TL-H is a P-channel power MOSFET in an ECH8 package for high-density mounting, rated for -12 V drain-to-source voltage and -5 A continuous drain current. It features a 1.8 V gate drive capability and integrated protection diode. The device has a static on-state resistance of 41 mΩ at -4.5 V gate-source voltage and -3 A drain current, with a total gate charge of 6.9 nC. It meets RoHS and halogen-free compliance standards and is shipped in 3,000-piece reels. The package measures 8.2 mm × 6.0 mm × 0.65 mm in height.

Datasheet Summary
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ECH8674-TL-H is a P-channel power MOSFET in an ECH8 package for high-density mounting, rated for -12 V drain-to-source voltage and -5 A continuous drain current. It features a 1.8 V gate drive capability and integrated protection diode. The device has a static on-state resistance of 41 mΩ at -4.5 V gate-source voltage and -3 A drain current, with a total gate charge of 6.9 nC. It meets RoHS and halogen-free compliance standards and is shipped in 3,000-piece reels. The package measures 8.2 mm × 6.0 mm × 0.65 mm in height.

Suppliers

Company
Product
Description
Supplier Links
 - ECH8674-TL-H - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number ECH8674-TL-H
Package Type SMD8
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