Panasonic ECH8410-TL-H

Description
Power Field-Effect Transistor
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Description
Power Field-Effect Transistor
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Datasheet
Datasheet Summary
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The ECH8410-TL-H is an N-channel power MOSFET designed for switching applications, housed in the ECH8 package with dimensions of 8.2 mm × 6.0 mm. It operates at a maximum drain-to-source voltage of 30 V and can handle a continuous drain current of 12 A. The device features a typical on-resistance of 10 mΩ at VGS=10 V and ID=6 A, and is optimized for 4 V gate drive. It includes a protection diode and meets halogen-free compliance standards. The package is supplied in a 3,000-piece reel. Specifications include a channel temperature rating of 150 °C and an operating storage temperature range of -55 °C to +150 °C.

Datasheet Summary
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The ECH8410-TL-H is an N-channel power MOSFET designed for switching applications, housed in the ECH8 package with dimensions of 8.2 mm × 6.0 mm. It operates at a maximum drain-to-source voltage of 30 V and can handle a continuous drain current of 12 A. The device features a typical on-resistance of 10 mΩ at VGS=10 V and ID=6 A, and is optimized for 4 V gate drive. It includes a protection diode and meets halogen-free compliance standards. The package is supplied in a 3,000-piece reel. Specifications include a channel temperature rating of 150 °C and an operating storage temperature range of -55 °C to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
 - ECH8410-TL-H - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number ECH8410-TL-H
Package Type SMD8
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