Panasonic ATP203-TL-H

Description
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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Description
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Request a Quote
Datasheet
Datasheet Summary
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ATP203-TL-H is an N-channel power MOSFET in an ATPAK package, rated for 30V drain-to-source voltage and 75A continuous drain current, with a maximum on-state resistance of 8.2mΩ at VGS=10V and ID=38A. It features a built-in protection diode, 4V drive capability, and halogen-free compliance. The device supports a maximum power dissipation of 50W at Tc=25°C and operates with a channel temperature up to 150°C. It meets RoHS standards and is supplied in tape and reel packaging. The ATPAK package measures 7.1mm x 5.9mm x 1.5mm.

Datasheet Summary
Powered by GS/AI

ATP203-TL-H is an N-channel power MOSFET in an ATPAK package, rated for 30V drain-to-source voltage and 75A continuous drain current, with a maximum on-state resistance of 8.2mΩ at VGS=10V and ID=38A. It features a built-in protection diode, 4V drive capability, and halogen-free compliance. The device supports a maximum power dissipation of 50W at Tc=25°C and operates with a channel temperature up to 150°C. It meets RoHS standards and is supplied in tape and reel packaging. The ATPAK package measures 7.1mm x 5.9mm x 1.5mm.

Suppliers

Company
Product
Description
Supplier Links
 - ATP203-TL-H - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number ATP203-TL-H
Polarity N-Channel
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