N-Channel Power MOSFET for general-purpose switching, housed in an ATPAK package measuring 7.1 mm × 5.9 mm, with a mass of 0.266 g. Rated for 30 V drain-to-source voltage, 35 A continuous drain current, and 30 W power dissipation at 25°C case temperature. Features a maximum RDS(on) of 33 mΩ at VGS=4.5V and 17 mΩ at VGS=10V, with a gate charge of 17 nC. Complies with RoHS and halogen-free standards. Not rated for automotive or life-sustaining applications.
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ATP201-V-TL-H |
| Polarity | N-Channel |