Panasonic ATP201-V-TL-H

Description
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications
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Description
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications
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Datasheet
Datasheet Summary
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N-Channel Power MOSFET for general-purpose switching, housed in an ATPAK package measuring 7.1 mm × 5.9 mm, with a mass of 0.266 g. Rated for 30 V drain-to-source voltage, 35 A continuous drain current, and 30 W power dissipation at 25°C case temperature. Features a maximum RDS(on) of 33 mΩ at VGS=4.5V and 17 mΩ at VGS=10V, with a gate charge of 17 nC. Complies with RoHS and halogen-free standards. Not rated for automotive or life-sustaining applications.

Datasheet Summary
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N-Channel Power MOSFET for general-purpose switching, housed in an ATPAK package measuring 7.1 mm × 5.9 mm, with a mass of 0.266 g. Rated for 30 V drain-to-source voltage, 35 A continuous drain current, and 30 W power dissipation at 25°C case temperature. Features a maximum RDS(on) of 33 mΩ at VGS=4.5V and 17 mΩ at VGS=10V, with a gate charge of 17 nC. Complies with RoHS and halogen-free standards. Not rated for automotive or life-sustaining applications.

Suppliers

Company
Product
Description
Supplier Links
 - ATP201-V-TL-H - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications

N-Channel Silicon MOSFET For General-Purpose Switching Device Applications

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number ATP201-V-TL-H
Polarity N-Channel
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