Panasonic 50A02SP-AC

Description
PNP Epitaxial Planar Silicon Transistor For Low-Frequency General-Purpose Amplifier Applications
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Description
PNP Epitaxial Planar Silicon Transistor For Low-Frequency General-Purpose Amplifier Applications
Request a Quote
Datasheet
Datasheet Summary
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PNP epitaxial planar silicon transistor for low-frequency amplifier and switching applications, housed in a 3-pin SOT-23 package with dimensions of 7.0 mm × 8.1 mm. Features a collector-to-emitter saturation voltage of typ. 120 mV at IC = −100 mA and IB = −10 mA, DC current gain (hFE) of 200 to 500 at VCE = −2 V and IC = −10 mA, and a gain-bandwidth product of 690 MHz. Maximum ratings include collector-to-base voltage of −50 V, collector current of 500 mA, and power dissipation of 400 mW at 25°C, with junction temperature up to 150°C and storage temperature from −55°C to +150°C.

Datasheet Summary
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PNP epitaxial planar silicon transistor for low-frequency amplifier and switching applications, housed in a 3-pin SOT-23 package with dimensions of 7.0 mm × 8.1 mm. Features a collector-to-emitter saturation voltage of typ. 120 mV at IC = −100 mA and IB = −10 mA, DC current gain (hFE) of 200 to 500 at VCE = −2 V and IC = −10 mA, and a gain-bandwidth product of 690 MHz. Maximum ratings include collector-to-base voltage of −50 V, collector current of 500 mA, and power dissipation of 400 mW at 25°C, with junction temperature up to 150°C and storage temperature from −55°C to +150°C.

Suppliers

Company
Product
Description
Supplier Links
 - 50A02SP-AC - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Planar Silicon Transistor For Low-Frequency General-Purpose Amplifier Applications

PNP Epitaxial Planar Silicon Transistor For Low-Frequency General-Purpose Amplifier Applications

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 50A02SP-AC
Polarity PNP
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