Panasonic 3LN03SS-TL-E

Description
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications
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Description
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications
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Datasheet
Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching applications in a SSFP package, rated for 30 V drain-to-source voltage and 0.35 A continuous drain current, with a gate-to-source voltage limit of 10 V and an operating junction temperature up to 150°C. It features low ON-resistance (max 1.15 Ω at 2.5 V gate drive), built-in gate-source protection diode, and supports 2.5 V logic-level operation. Switching times are 8 ns turn-on delay, 4.5 ns rise time, 11 ns turn-off delay, and 6 ns fall time. The device meets RoHS standards and is qualified for automotive applications under AEC-Q200.

Datasheet Summary
Powered by GS/AI

N-Channel Silicon MOSFET for general-purpose switching applications in a SSFP package, rated for 30 V drain-to-source voltage and 0.35 A continuous drain current, with a gate-to-source voltage limit of 10 V and an operating junction temperature up to 150°C. It features low ON-resistance (max 1.15 Ω at 2.5 V gate drive), built-in gate-source protection diode, and supports 2.5 V logic-level operation. Switching times are 8 ns turn-on delay, 4.5 ns rise time, 11 ns turn-off delay, and 6 ns fall time. The device meets RoHS standards and is qualified for automotive applications under AEC-Q200.

Suppliers

Company
Product
Description
Supplier Links
 - 3LN03SS-TL-E - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications

N-Channel Silicon MOSFET For General-Purpose Switching Device Applications

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 3LN03SS-TL-E
Polarity N-Channel
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