N-Channel Silicon MOSFET for general-purpose switching applications in a SSFP package, rated for 30 V drain-to-source voltage and 0.35 A continuous drain current, with a gate-to-source voltage limit of 10 V and an operating junction temperature up to 150°C. It features low ON-resistance (max 1.15 Ω at 2.5 V gate drive), built-in gate-source protection diode, and supports 2.5 V logic-level operation. Switching times are 8 ns turn-on delay, 4.5 ns rise time, 11 ns turn-off delay, and 6 ns fall time. The device meets RoHS standards and is qualified for automotive applications under AEC-Q200.
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 3LN03SS-TL-E |
| Polarity | N-Channel |