Panasonic 30A01C-TB-E

PNP epitaxial planar silicon transistor for low-frequency power amplifier and muting applications in an ultrasmall CP package measuring 2.9 mm × 0.95 mm × 1.9 mm. It has a collector-to-emitter voltage rating of 30 V, collector current of 300 mA, and collector dissipation of 300 mW mounted on a glass epoxy board. The device exhibits a typical collector-to-emitter saturation voltage of 110 mV at IC = 100 mA and IB = 5 mA, with a DC current gain (hFE) of 200 to 500 at VCE = -2 V and IC = -10 mA. The junction temperature ranges from -55°C to +150°C, and the part meets RoHS compliance standards.