Panasonic 2SK4123LS

Description
18A, 450V, 0.34ohm, N-Channel MOSFET, TO-220AB
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Description
18A, 450V, 0.34ohm, N-Channel MOSFET, TO-220AB
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Datasheet
Datasheet Summary
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N-channel silicon MOSFET for general-purpose switching, packaged in a TO-220FI(LS) case with a drain-to-source voltage rating of 450 V, continuous drain current of 12.4 A at Tc=25°C, and static drain-to-source on-state resistance of 0.26 to 0.34 Ω at VGS=10 V and ID=9 A. It features avalanche energy resistance of 412 mJ and is rated for a channel temperature of 150°C. The device meets the HVP process reliability standard and has good attachment workability due to its mica-less design.

Datasheet Summary
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N-channel silicon MOSFET for general-purpose switching, packaged in a TO-220FI(LS) case with a drain-to-source voltage rating of 450 V, continuous drain current of 12.4 A at Tc=25°C, and static drain-to-source on-state resistance of 0.26 to 0.34 Ω at VGS=10 V and ID=9 A. It features avalanche energy resistance of 412 mJ and is rated for a channel temperature of 150°C. The device meets the HVP process reliability standard and has good attachment workability due to its mica-less design.

Suppliers

Company
Product
Description
Supplier Links
 - 2SK4123LS - Rochester Electronics
Newburyport, MA, United States
18A, 450V, 0.34ohm, N-Channel MOSFET, TO-220AB

18A, 450V, 0.34ohm, N-Channel MOSFET, TO-220AB

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK4123LS
Polarity N-Channel
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