N-channel silicon MOSFET for general-purpose switching, packaged in a TO-220FI(LS) case with a drain-to-source voltage rating of 450 V, continuous drain current of 12.4 A at Tc=25°C, and static drain-to-source on-state resistance of 0.26 to 0.34 Ω at VGS=10 V and ID=9 A. It features avalanche energy resistance of 412 mJ and is rated for a channel temperature of 150°C. The device meets the HVP process reliability standard and has good attachment workability due to its mica-less design.
18A, 450V, 0.34ohm, N-Channel MOSFET, TO-220AB
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4123LS |
| Polarity | N-Channel |