N-Channel Silicon MOSFET designed for general-purpose switching applications, mounted in a TO-220FI(LS) package with dimensions of 10.0 mm length, 4.5 mm width, and 15.2 mm height. It has a drain-to-source voltage rating of 500 V, a continuous drain current of 8.3 A at Tc=25°C, and a pulse drain current of 38 A. The device features a typical static drain-to-source on-state resistance of 0.65 Ω at VGS=10 V and ID=5 A, with an avalanche energy rating of 280 mJ and an avalanche current of 9.5 A. Input, output, and reverse transfer capacitances are 750 pF, 150 pF, and 35 pF respectively at VDS=30 V and f=1 MHz. The total gate charge is 30 nC under switching conditions. Operating junction temperature ranges from -55°C to 150°C.
N-Channel Silicon MOSFET General-Purpose Switching Device Application
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4097LS |
| Polarity | N-Channel |