N-Channel Silicon MOSFET for general-purpose switching, in a TO-220FI(LS) package. It has a drain-to-source voltage rating of 500 V, continuous drain current of 7.1 A at Tc=25°C, and pulse drain current of 32 A. The device exhibits low on-state resistance of 0.65 to 0.85 Ω at ID=4A and VGS=10V, with total gate charge of 24 nC. Avalanche energy is rated at 397 mJ, and it guarantees avalanche current up to 8 A. Input, output, and reverse transfer capacitances are 600 pF, 130 pF, and 28 pF respectively at VDS=30 V and f=1 MHz. The operating channel temperature range is up to 150°C, with storage temperature from -55°C to +150°C. The part meets high-reliability HVP process standards and features mica-less packaging for improved attachment workability.
N-Channel Silicon MOSFET General-Purpose Switching Device Application
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4096LS |
| Polarity | N-Channel |