Panasonic 2SK4094

Description
N-Channel Silicon MOSFET General-Purpose Switching Device Application
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Description
N-Channel Silicon MOSFET General-Purpose Switching Device Application
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Datasheet
Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching applications, housed in a TO-220 package with dimensions of 10.2 mm × 4.5 mm. It has a drain-to-source voltage rating of 60 V, continuous drain current of 100 A, and pulsed drain current of 400 A. The device features low ON-resistance of 3.8 to 7.0 mΩ depending on gate voltage, avalanche energy rating of 850 mJ, and avalanche current of 70 A. Maximum channel temperature is 150 °C, and storage temperature ranges from -55 °C to +150 °C.

Datasheet Summary
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N-Channel Silicon MOSFET for general-purpose switching applications, housed in a TO-220 package with dimensions of 10.2 mm × 4.5 mm. It has a drain-to-source voltage rating of 60 V, continuous drain current of 100 A, and pulsed drain current of 400 A. The device features low ON-resistance of 3.8 to 7.0 mΩ depending on gate voltage, avalanche energy rating of 850 mJ, and avalanche current of 70 A. Maximum channel temperature is 150 °C, and storage temperature ranges from -55 °C to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SK4094 - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET General-Purpose Switching Device Application

N-Channel Silicon MOSFET General-Purpose Switching Device Application

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK4094
Polarity N-Channel
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