N-Channel Silicon MOSFET for general-purpose switching applications, housed in a TO-220 package with dimensions of 10.2 mm × 4.5 mm. It has a drain-to-source voltage rating of 60 V, continuous drain current of 100 A, and pulsed drain current of 400 A. The device features low ON-resistance of 3.8 to 7.0 mΩ depending on gate voltage, avalanche energy rating of 850 mJ, and avalanche current of 70 A. Maximum channel temperature is 150 °C, and storage temperature ranges from -55 °C to +150 °C.
N-Channel Silicon MOSFET General-Purpose Switching Device Application
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4094 |
| Polarity | N-Channel |