Panasonic 2SK3615-E

N-Channel Silicon MOSFET for general-purpose switching applications in a SANYO TP-FA package, measuring 6.5 mm x 5.0 mm. It features a drain-to-source voltage rating of 60 V, continuous drain current of 12 A, and a maximum power dissipation of 20 W at Tc=25°C. The device supports 4 V gate drive, with an on-state resistance of 45 to 85 mΩ depending on gate voltage, and exhibits ultrahigh-speed switching with rise and fall times of 40 ns and 60 ns respectively. Total gate charge is 16 nC at VDS=30 V and VGS=10 V. The part meets standard semiconductor reliability requirements and is rated for channel temperature up to 150°C and storage temperature from -55°C to +150°C.