Panasonic 2SK3486-TD-E

Description
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications
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Description
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications
Request a Quote
Datasheet
Datasheet Summary
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N-Channel Silicon MOSFET designed for general-purpose switching applications, featuring a 20 V drain-to-source voltage rating, 8 A continuous drain current, and low ON-resistance of 40 to 56 mΩ at 2.5 V gate drive. It supports ultrahigh-speed switching with turn-on and turn-off delays of 13 ns and 53 ns respectively. Packaged in a standard surface-mount format, it operates with a channel temperature limit of 150°C and storage temperature range of -55°C to +150°C. The device meets RoHS standards and is rated for operation on a 250 mm² × 0.8 mm ceramic board with 1.5 W power dissipation at ambient temperatures up to 25°C.

Datasheet Summary
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N-Channel Silicon MOSFET designed for general-purpose switching applications, featuring a 20 V drain-to-source voltage rating, 8 A continuous drain current, and low ON-resistance of 40 to 56 mΩ at 2.5 V gate drive. It supports ultrahigh-speed switching with turn-on and turn-off delays of 13 ns and 53 ns respectively. Packaged in a standard surface-mount format, it operates with a channel temperature limit of 150°C and storage temperature range of -55°C to +150°C. The device meets RoHS standards and is rated for operation on a 250 mm² × 0.8 mm ceramic board with 1.5 W power dissipation at ambient temperatures up to 25°C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SK3486-TD-E - Rochester Electronics
Newburyport, MA, United States
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications

N-Channel Silicon MOSFET For General-Purpose Switching Device Applications

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 2SK3486-TD-E
Polarity N-Channel
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