N-Channel Silicon MOSFET designed for general-purpose switching applications, featuring a 20 V drain-to-source voltage rating, 8 A continuous drain current, and low ON-resistance of 40 to 56 mΩ at 2.5 V gate drive. It supports ultrahigh-speed switching with turn-on and turn-off delays of 13 ns and 53 ns respectively. Packaged in a standard surface-mount format, it operates with a channel temperature limit of 150°C and storage temperature range of -55°C to +150°C. The device meets RoHS standards and is rated for operation on a 250 mm² × 0.8 mm ceramic board with 1.5 W power dissipation at ambient temperatures up to 25°C.
N-Channel Silicon MOSFET For General-Purpose Switching Device Applications
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK3486-TD-E |
| Polarity | N-Channel |