Panasonic 2SK2631-TL-E

N-channel silicon MOSFET designed for ultrahigh-speed switching applications, packaged in a TO-220AB (TP-FA) case with dimensions of 10.0 mm × 4.5 mm × 15.0 mm (excluding pins). It has a drain-to-source voltage rating of 800 V, a continuous drain current of 1 A, and a pulse drain current of 3 A. The device features a static drain-to-source on-state resistance of 7.5 to 10 Ω at VGS = 15 V and ID = 0.5 A, with a total gate charge of 8 nC. It meets the absolute maximum channel temperature of 150 °C and storage temperature range of -55 to +150 °C. The package is rated for surface-mount or through-hole mounting.