Panasonic 2SK2631-E

N-channel silicon MOSFET for ultrahigh-speed switching applications in a TO-220FP package, measuring 8.0 mm × 5.1 mm × 6.5 mm, with an 800 V drain-to-source breakdown voltage, 1 A continuous drain current, and a maximum on-state resistance of 10 Ω at 0.5 A and 15 V gate drive. Total gate charge is 8 nC, with turn-on delay of 12 ns and fall time of 16 ns under specified test conditions. Operating junction temperature range is up to 150°C, and storage temperature ranges from -55°C to +150°C. The device meets RoHS requirements and is marked K2631. No other qualifications such as AEC-Q200 or MIL-STD-202 are stated.