Panasonic 2SD1851-TB-E

Description
PNP Epitaxial Planar Silicon Transistor Driver Application
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Description
PNP Epitaxial Planar Silicon Transistor Driver Application
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Datasheet
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NPN Darlington transistor for driver applications, housed in an ultrasmall CP package with dimensions of 5.2 mm in length, 3.0 mm in width, and 1.1 mm in height. The device has a collector-to-emitter voltage rating of 50 V, a collector current of 200 mA, a collector dissipation of 200 mW, and a junction temperature rating of 150°C. It features a high DC current gain of 3000 to 4000 at 100 mA collector current and a collector-to-emitter saturation voltage of 0.9 to 1.5 V. The storage temperature range is -55°C to +150°C. Applies to the 2SD1851 series.

Datasheet Summary
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NPN Darlington transistor for driver applications, housed in an ultrasmall CP package with dimensions of 5.2 mm in length, 3.0 mm in width, and 1.1 mm in height. The device has a collector-to-emitter voltage rating of 50 V, a collector current of 200 mA, a collector dissipation of 200 mW, and a junction temperature rating of 150°C. It features a high DC current gain of 3000 to 4000 at 100 mA collector current and a collector-to-emitter saturation voltage of 0.9 to 1.5 V. The storage temperature range is -55°C to +150°C. Applies to the 2SD1851 series.

Suppliers

Company
Product
Description
Supplier Links
 - 2SD1851-TB-E - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Planar Silicon Transistor Driver Application

PNP Epitaxial Planar Silicon Transistor Driver Application

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SD1851-TB-E
Polarity PNP
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