Panasonic Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC5632G0L

Description
RF TRANS NPN 8V 1.1GHZ SMINI3-F2
Datasheet
Description
RF TRANS NPN 8V 1.1GHZ SMINI3-F2
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SC5632G0L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC5632G0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC5632G0L
RF TRANS NPN 8V 1.1GHZ SMINI3-F2

RF TRANS NPN 8V 1.1GHZ SMINI3-F2

Supplier's Site
Bipolar RF Transistors - 2SC5632G0L - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
2SC5632G0L
Bipolar RF Transistors 2SC5632G0L
RF TRANS NPN 8V 1.1GHZ SMINI3-F2

RF TRANS NPN 8V 1.1GHZ SMINI3-F2

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SC5632G0L 2SC5632G0L
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar RF Transistors
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
VCEO 8 volts 8 volts
Output Power 0.1500 watts 0.1500 watts
Polarity NPN; NPN
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