Panasonic 2SC4163M

Description
Power Bipolar Transistor, 12A, 400V, NPN, TO-220AB, 3 Pin
Request a Quote
Description
Power Bipolar Transistor, 12A, 400V, NPN, TO-220AB, 3 Pin
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

NPN silicon transistor for switching regulator applications, packaged in TO-220ML with a base-collector voltage rating of 500 V, collector-emitter voltage of 400 V, and continuous collector current of 12 A. Features high-speed switching with typical turn-on time of 0.5 µs, fall time of 0.3 µs, and storage time of 2.5 µs. Collector dissipation is 40 W at Tc=25°C, with junction temperature rating up to 150°C. hFE is classified in grades L (15-30), M (20-40), and N (30-50) for VCE=5V and IC=1.6A. The part is micaless and designed for easy mounting.

Datasheet Summary
Powered by GS/AI

NPN silicon transistor for switching regulator applications, packaged in TO-220ML with a base-collector voltage rating of 500 V, collector-emitter voltage of 400 V, and continuous collector current of 12 A. Features high-speed switching with typical turn-on time of 0.5 µs, fall time of 0.3 µs, and storage time of 2.5 µs. Collector dissipation is 40 W at Tc=25°C, with junction temperature rating up to 150°C. hFE is classified in grades L (15-30), M (20-40), and N (30-50) for VCE=5V and IC=1.6A. The part is micaless and designed for easy mounting.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC4163M - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 12A, 400V, NPN, TO-220AB, 3 Pin

Power Bipolar Transistor, 12A, 400V, NPN, TO-220AB, 3 Pin

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number 2SC4163M
Package Type TO-220; TO-220AB
Unlock Full Specs
to access all available technical data