Panasonic 2SC4161N

Description
Power Bipolar Transistor, 7A, 400V, NPN, TO-220AB, 3 Pin
Request a Quote
Description
Power Bipolar Transistor, 7A, 400V, NPN, TO-220AB, 3 Pin
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

NPN silicon transistor for switching regulator applications, rated at 400 V collector-to-emitter voltage and 7 A continuous collector current, housed in a TO-220ML micaless package with dimensions of 2.55 mm × 2.55 mm × 10.0 mm. Features high breakdown voltage, high-speed switching with a typical turn-off time of 0.1 µs, and an auxiliary switching time test circuit for 200 V operation. Maximum collector dissipation is 30 W at Tc = 25°C. Junction temperature rating is 150°C, with storage temperature range from -55°C to +150°C. The part meets SANYO's MBIT process standards and is rated for safe operating area (ASO) applications.

Datasheet Summary
Powered by GS/AI

NPN silicon transistor for switching regulator applications, rated at 400 V collector-to-emitter voltage and 7 A continuous collector current, housed in a TO-220ML micaless package with dimensions of 2.55 mm × 2.55 mm × 10.0 mm. Features high breakdown voltage, high-speed switching with a typical turn-off time of 0.1 µs, and an auxiliary switching time test circuit for 200 V operation. Maximum collector dissipation is 30 W at Tc = 25°C. Junction temperature rating is 150°C, with storage temperature range from -55°C to +150°C. The part meets SANYO's MBIT process standards and is rated for safe operating area (ASO) applications.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC4161N - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 7A, 400V, NPN, TO-220AB, 3 Pin

Power Bipolar Transistor, 7A, 400V, NPN, TO-220AB, 3 Pin

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number 2SC4161N
Package Type TO-220; TO-220AB
Unlock Full Specs
to access all available technical data