Panasonic 2SC4159E

NPN epitaxial planar silicon transistor for high-voltage switching and AF 100W driver applications, housed in a TO-220ML micaless package with dimensions of 10.0 mm length, 6.5 mm width, and 4.2 mm height. Features a collector-to-emitter voltage rating of -160 V, collector current of 1.5 A, collector dissipation of 15 W, and junction temperature limit of 150 °C. DCCurrent gain hFE ranges from 100 to 200 at VCE = -5 V and IC = -300 mA, with a gain-bandwidth product of 100 MHz. Collector-to-emitter saturation voltage is 0.3 V at IC = -500 mA and IB = -50 mA.