Panasonic 2SC4159D

NPN epitaxial planar silicon transistor for high-voltage switching and AF 100W driver applications, housed in a TO-220ML package with dimensions of 20.4 × 10.0 × 5.3 mm. Features a collector-to-emitter voltage rating of −160 V, collector current of −1.5 A, and power dissipation of 15 W. Junction temperature is rated to 150 °C. DCCurrent gain (hFE) is classified as 100 to 200 at VCE = −5 V and IC = −300 mA. The device meets standards for micaless mounting and operates within a storage temperature range of −55 °C to +150 °C.