Panasonic 2SC3786

Description
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Description
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Datasheet
Datasheet Summary
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NPN silicon transistor for switching applications such as motor, printer hammer, and relay drivers, packaged in TO-126LP with dimensions of 8.0 × 5.1 × 2.4 mm. It features an on-chip 60±10 V Zener diode between collector and base, a collector-to-emitter voltage rating of 50 V, a continuous collector current of 3 A, and a DC current gain (hFE) ranging from 1000 to 4000 at IC = 1.5 A. The device supports an inductive load handling capability of 25 mJ with L = 100 mH and has a collector dissipation of 20 W at Tc = 25°C. Junction temperature ranges from -55°C to 150°C.

Datasheet Summary
Powered by GS/AI

NPN silicon transistor for switching applications such as motor, printer hammer, and relay drivers, packaged in TO-126LP with dimensions of 8.0 × 5.1 × 2.4 mm. It features an on-chip 60±10 V Zener diode between collector and base, a collector-to-emitter voltage rating of 50 V, a continuous collector current of 3 A, and a DC current gain (hFE) ranging from 1000 to 4000 at IC = 1.5 A. The device supports an inductive load handling capability of 25 mJ with L = 100 mH and has a collector dissipation of 20 W at Tc = 25°C. Junction temperature ranges from -55°C to 150°C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SC3786 - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number 2SC3786
Package Type TO-126LP-3
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