NPN epitaxial planar silicon transistor for ultrahigh-definition CRT display and video output applications, housed in a TO-126 package. Features a collector-to-emitter breakdown voltage of 120 V, a maximum collector current of 300 mA, and a gain-bandwidth product of 500 MHz. Reverse transfer capacitance is 2.5 pF. Complementary to the 2SA1405 PNP transistor. Rated for junction temperatures up to 150 °C and meets no specified industry standards beyond basic semiconductor operational limits.
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NPN epitaxial planar silicon transistor for ultrahigh-definition CRT display and video output applications, housed in a TO-126 package. Features a collector-to-emitter breakdown voltage of 120 V, a maximum collector current of 300 mA, and a gain-bandwidth product of 500 MHz. Reverse transfer capacitance is 2.5 pF. Complementary to the 2SA1405 PNP transistor. Rated for junction temperatures up to 150 °C and meets no specified industry standards beyond basic semiconductor operational limits.
