The 2SC3150 is an NPN triple diffused planar silicon transistor for switching regulator applications, housed in a TO-220AB package. It has a collector-to-base breakdown voltage of 900 V, a collector-to-emitter voltage rating of 800 V, and a continuous collector current of 3 A. The transistor supports a maximum collector dissipation of 50 W at Tc = 25°C and operates with a junction temperature up to 150°C. It exhibits a gain-bandwidth product of 15 MHz and an output capacitance of 60 pF. Switching times include a turn-on time of 1.0 µs, storage time of 3.0 µs, and fall time of 0.7 µs under specified test conditions. The device meets JEDEC TO-220AB and EIAJ SC-46 package standards.
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The 2SC3150 is an NPN triple diffused planar silicon transistor for switching regulator applications, housed in a TO-220AB package. It has a collector-to-base breakdown voltage of 900 V, a collector-to-emitter voltage rating of 800 V, and a continuous collector current of 3 A. The transistor supports a maximum collector dissipation of 50 W at Tc = 25°C and operates with a junction temperature up to 150°C. It exhibits a gain-bandwidth product of 15 MHz and an output capacitance of 60 pF. Switching times include a turn-on time of 1.0 µs, storage time of 3.0 µs, and fall time of 0.7 µs under specified test conditions. The device meets JEDEC TO-220AB and EIAJ SC-46 package standards.
