Panasonic 2SB631KF

Description
100 V 1A PNP Epitaxial Planar Silicon Transistor For Low-Frequency Power Amplifier Applications
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Description
100 V 1A PNP Epitaxial Planar Silicon Transistor For Low-Frequency Power Amplifier Applications
Request a Quote
Datasheet
Datasheet Summary
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2SB631K is a PNP epitaxial planar silicon transistor for low-frequency power amplifier applications, housed in a TO-126 package with physical dimensions of 8.0 mm x 4.0 mm x 5.1 mm. It has a collector-to-emitter voltage rating of 120 V, collector current of 1 A, and collector dissipation of 8 W at Tc=25°C. Junction temperature operates up to 150°C. The transistor features a minimum DC current gain (hFE) of 100 at IC=50 mA and a maximum collector-to-emitter saturation voltage of 0.4 V at IC=500 mA and IB=50 mA. Gain-bandwidth product is 130 MHz. It meets RoHS standards.

Datasheet Summary
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2SB631K is a PNP epitaxial planar silicon transistor for low-frequency power amplifier applications, housed in a TO-126 package with physical dimensions of 8.0 mm x 4.0 mm x 5.1 mm. It has a collector-to-emitter voltage rating of 120 V, collector current of 1 A, and collector dissipation of 8 W at Tc=25°C. Junction temperature operates up to 150°C. The transistor features a minimum DC current gain (hFE) of 100 at IC=50 mA and a maximum collector-to-emitter saturation voltage of 0.4 V at IC=500 mA and IB=50 mA. Gain-bandwidth product is 130 MHz. It meets RoHS standards.

Suppliers

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Product
Description
Supplier Links
 - 2SB631KF - Rochester Electronics
Newburyport, MA, United States
100 V 1A PNP Epitaxial Planar Silicon Transistor For Low-Frequency Power Amplifier Applications

100 V 1A PNP Epitaxial Planar Silicon Transistor For Low-Frequency Power Amplifier Applications

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number 2SB631KF
Package Type SIP3
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