Panasonic 2SB1295-6-TB-E

PNP epitaxial planar silicon transistor for low-frequency general-purpose amplifier applications, in an ultrasmall-sized package with a collector-to-emitter voltage rating of -15 V, a continuous collector current of -0.8 A, and a power dissipation of 200 mW. Features a low collector-to-emitter saturation voltage of -200 mV at -400 mA collector current and a DC current gain (hFE) range of 200 to 400 for the 6 rank. Operating junction temperature range is up to 150 °C. Complies with standard silicon transistor specifications for amplification and switching in compact designs.