Panasonic 2SB1202S-TL-E

Description
Power Bipolar Transistor
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Description
Power Bipolar Transistor
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Datasheet
Datasheet Summary
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The 2SB1202S-TL-E is a PNP bipolar transistor in a TP-FA package, designed for voltage regulators, relay drivers, and lamp drivers. It has a collector-to-emitter voltage rating of -50 V and a continuous collector current of -3 A. The device features a low collector-to-emitter saturation voltage of 0.19 V typ at -2 A and -100 mA base current, and a junction temperature rating of 150°C. The package is a surface-mount DPAK variant with dimensions of 6.5 mm x 5.1 mm x 2.3 mm and a mass of 0.282 g. It meets RoHS specifications and is supplied on a 700-piece reel. The transistor is organized into gain groups (R, S, T, U) based on hFE at -100 mA, with this part falling into the S or T rank as indicated by its marking.

Datasheet Summary
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The 2SB1202S-TL-E is a PNP bipolar transistor in a TP-FA package, designed for voltage regulators, relay drivers, and lamp drivers. It has a collector-to-emitter voltage rating of -50 V and a continuous collector current of -3 A. The device features a low collector-to-emitter saturation voltage of 0.19 V typ at -2 A and -100 mA base current, and a junction temperature rating of 150°C. The package is a surface-mount DPAK variant with dimensions of 6.5 mm x 5.1 mm x 2.3 mm and a mass of 0.282 g. It meets RoHS specifications and is supplied on a 700-piece reel. The transistor is organized into gain groups (R, S, T, U) based on hFE at -100 mA, with this part falling into the S or T rank as indicated by its marking.

Suppliers

Company
Product
Description
Supplier Links
 - 2SB1202S-TL-E - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor

Power Bipolar Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number 2SB1202S-TL-E
Package Type DPAK
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