PNP silicon transistor for switching applications, packaged in a 3-pin FLP (SANYO FLP) case with dimensions of 10.5 mm × 4.5 mm × 2.6 mm. Rated for a collector-to-emitter voltage of 50 V, collector current of 4 A, and power dissipation of 1.5 W. Features low saturation voltage, wide safe operating area, and high DC current gain (hFE ranging from 140 to 280 for the S rank). Junction temperature range is −55°C to 150°C. Meets AEC-Q200 qualification. Switching time characteristics include turn-on time of 70 ns and fall time of 35 ns. Designed for automatic mounting with radial taping.
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PNP silicon transistor for switching applications, packaged in a 3-pin FLP (SANYO FLP) case with dimensions of 10.5 mm × 4.5 mm × 2.6 mm. Rated for a collector-to-emitter voltage of 50 V, collector current of 4 A, and power dissipation of 1.5 W. Features low saturation voltage, wide safe operating area, and high DC current gain (hFE ranging from 140 to 280 for the S rank). Junction temperature range is −55°C to 150°C. Meets AEC-Q200 qualification. Switching time characteristics include turn-on time of 70 ns and fall time of 35 ns. Designed for automatic mounting with radial taping.
