Panasonic 2SA1708S-AN

Description
PNP Epitaxial Planar Silicon Transistor For High-Voltage Switching Applications
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Description
PNP Epitaxial Planar Silicon Transistor For High-Voltage Switching Applications
Request a Quote
Datasheet
Datasheet Summary
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The 2SA1708S-AN is a PNP bipolar transistor in an NMP (Taping) package, designed for high-voltage switching applications. It has a collector-to-emitter voltage rating of -100 V, a collector current rating of -1 A, and a collector dissipation of 1 W. The device features a low collector-to-emitter saturation voltage of -0.2 V at -400 mA collector current and -40 mA base current, and a DC current gain (hFE) ranging from 140 to 280 for the S-rank. The package dimensions are 6.9 mm × 2.5 mm × 1.45 mm, with an overall mass of 0.275 g. It complies with the JEITA/JEDEC SC-71 standard and is shipped in tapes of 2,500 units per box.

Datasheet Summary
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The 2SA1708S-AN is a PNP bipolar transistor in an NMP (Taping) package, designed for high-voltage switching applications. It has a collector-to-emitter voltage rating of -100 V, a collector current rating of -1 A, and a collector dissipation of 1 W. The device features a low collector-to-emitter saturation voltage of -0.2 V at -400 mA collector current and -40 mA base current, and a DC current gain (hFE) ranging from 140 to 280 for the S-rank. The package dimensions are 6.9 mm × 2.5 mm × 1.45 mm, with an overall mass of 0.275 g. It complies with the JEITA/JEDEC SC-71 standard and is shipped in tapes of 2,500 units per box.

Suppliers

Company
Product
Description
Supplier Links
 - 2SA1708S-AN - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Planar Silicon Transistor For High-Voltage Switching Applications

PNP Epitaxial Planar Silicon Transistor For High-Voltage Switching Applications

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF Transistors
Product Number 2SA1708S-AN
Polarity PNP
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