The 2SA1469 is a PNP epitaxial planar silicon transistor for high-speed switching and power amplification applications, housed in a TO-220ML package measuring 10.0 mm × 4.5 mm × 1.81 mm. It has a collector-to-emitter voltage rating of 60 V, a continuous collector current of 5 A, and a collector dissipation of 20 W at Tc=25°C. With a typical current gain (hFE) of 70 to 280 at IC=1 A, a gain-bandwidth product of 100 MHz, and a collector-to-emitter saturation voltage of 0.4 V at IC=2.5 A, it is suited for inverters, lamp drivers, and motor controllers. Switching times are 0.1 µs turn-on, 0.5 µs storage, and 0.1 µs fall time. The device meets RoHS standards and operates within a junction temperature range of -55°C to 150°C.
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The 2SA1469 is a PNP epitaxial planar silicon transistor for high-speed switching and power amplification applications, housed in a TO-220ML package measuring 10.0 mm × 4.5 mm × 1.81 mm. It has a collector-to-emitter voltage rating of 60 V, a continuous collector current of 5 A, and a collector dissipation of 20 W at Tc=25°C. With a typical current gain (hFE) of 70 to 280 at IC=1 A, a gain-bandwidth product of 100 MHz, and a collector-to-emitter saturation voltage of 0.4 V at IC=2.5 A, it is suited for inverters, lamp drivers, and motor controllers. Switching times are 0.1 µs turn-on, 0.5 µs storage, and 0.1 µs fall time. The device meets RoHS standards and operates within a junction temperature range of -55°C to 150°C.
