Panasonic 2SA1469R-MBS-LA9

PNP epitaxial planar silicon transistor for high-speed switching applications, packaged in a TO-220ML case with a max collector-to-emitter voltage of 60 V, collector current of 5 A, and collector dissipation of 20 W at Tc=25°C. Features low saturation voltage (0.4 V at IC=2.5 A), DC current gain (hFE 70-280), and gain-bandwidth product of 100 MHz. Switching times include turn-on time of 0.1 μs, storage time of 0.5 μs, and fall time of 0.1 μs. Operating junction temperature range is -55°C to 150°C.