Panasonic 2SA1207S-AA

PNP epitaxial planar silicon transistor for high-voltage switching and AF 60W predriver applications, housed in a 3-pin case with dimensions of 5.0 mm × 4.0 mm. It has a collector-to-base voltage rating of −180 V, collector-to-emitter voltage of −160 V, and collector current of −70 mA, with a power dissipation of 600 mW. Junction temperature ranges from −55 °C to 150 °C. Features include a DC current gain (hFE) of 140 to 280 for the S-rank variant, gain-bandwidth product of 150 MHz, output capacitance of 2.0 pF, and switching times of 0.1 µs turn-on and 0.2 µs fall time. Complies with SANYO's FBET process and automotive reliability standards.