The 12A01C is a PNP epitaxial planar silicon transistor for low-frequency general-purpose amplifier and small motor drive applications. It is packaged in a CP case with dimensions of 5.0 mm by 5.1 mm and pinout: 1-base, 2-emitter, 3-collector. The device has a collector-to-emitter voltage rating of -12 V, a collector current of -500 mA, and a collector dissipation of 300 mW when mounted on a glass-epoxy board. The typical collector-to-emitter saturation voltage is -300 mV at -200 mA collector current and -10 mA base current. The DC current gain hFE ranges from 300 to 700 at -10 mA collector current. The gain-bandwidth product is 490 MHz. Junction temperature ranges from -55 to +150 °C, with a storage temperature range of -55 to +150 °C.
Datasheet Summary Powered by GS/AI
The 12A01C is a PNP epitaxial planar silicon transistor for low-frequency general-purpose amplifier and small motor drive applications. It is packaged in a CP case with dimensions of 5.0 mm by 5.1 mm and pinout: 1-base, 2-emitter, 3-collector. The device has a collector-to-emitter voltage rating of -12 V, a collector current of -500 mA, and a collector dissipation of 300 mW when mounted on a glass-epoxy board. The typical collector-to-emitter saturation voltage is -300 mV at -200 mA collector current and -10 mA base current. The DC current gain hFE ranges from 300 to 700 at -10 mA collector current. The gain-bandwidth product is 490 MHz. Junction temperature ranges from -55 to +150 °C, with a storage temperature range of -55 to +150 °C.
