Panasonic Industry Europe GmbH Single Bipolar Transistors 2SD19960SA

NPN silicon bipolar transistor for low-voltage output amplification and DC-DC conversion, housed in the MT-1-A1 through-hole package with dimensions of 6.9±0.1 mm in length and 2.5±0.1 mm in width. It has a collector-emitter voltage rating of 20 V, collector current of 0.5 A, collector power dissipation of 600 mW, and a transition frequency of 200 MHz. Features include a low collector-emitter saturation voltage (as low as 0.13 V at 500 mA collector current), forward current transfer ratio ranging from 200 to 800, and ON resistance of 1.0 Ω. The device complies with the RoHS Directive (EU 2002/95/EC).