The 2SD0814A is a silicon NPN epitaxial planar transistor designed for high breakdown voltage, low-frequency, and low-noise amplification. It features a Mini3-G1 surface-mount package with dimensions of 2.90×1.90×1.00 mm. The device has a collector-emitter breakdown voltage of 185 V, a collector current rating of 50 mA, and a maximum power dissipation of 200 mW. Its transition frequency is 150 MHz, and it exhibits a noise voltage of 150 mV under specified conditions. The forward current transfer ratio (hFE) is classified in ranks Q, R, and S, ranging from 90 to 330. The part complies with the RoHS Directive (EU 2002/95/EC).
Bipolar (BJT) Transistor NPN 185V 50mA 150MHz 200mW Surface Mount Mini3-G1
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2SD0814ASLTR-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |
