NPN silicon epitaxial planar transistor for high-frequency amplification, housed in an S-Mini3-G1 package (EIAJ: SC-70) with dimensions of 2.0 mm × 1.3 mm × 1.0 mm. It has a collector-base voltage rating of 50 V, collector-emitter voltage of 50 V, emitter-base voltage of 5 V, collector current of 50 mA, and collector power dissipation of 150 mW. The transition frequency is 250 MHz, and the collector output capacitance is 1.5 pF. The forward current transfer ratio ranges from 200 to 500. The device complies with the RoHS Directive (EU 2002/95/EC).
Bipolar (BJT) Transistor NPN 50V 50mA 250MHz 150mW Surface Mount SMini3-G1
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2SC45620RLTR-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |
