The 2SB0873 series is a silicon PNP epitaxial planar transistor designed for low-frequency power amplification, DC-DC conversion, and stroboscope applications. It is packaged in a TO-92L-A1 case with dimensions of 5.9±0.2 mm in length, 4.9±0.2 mm in width, and 2.54±0.15 mm in lead spacing. The device has a collector-emitter voltage rating of −20 V, a collector current rating of −5 A, and a collector power dissipation of 1 W. The junction temperature is rated up to 150 °C. It complies with the RoHS Directive (EU 2002/95/EC).
Bipolar (BJT) Transistor PNP 20V 5A 120MHz 1W Through Hole TO-92L-A1
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2SB08730R-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |