Panasonic Industry Europe GmbH Single Bipolar Transistors 2SB08730R

Description
Bipolar (BJT) Transistor PNP 20V 5A 120MHz 1W Through Hole TO-92L-A1
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Description
Bipolar (BJT) Transistor PNP 20V 5A 120MHz 1W Through Hole TO-92L-A1
Request a Quote
Datasheet
Datasheet Summary
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The 2SB0873 series is a silicon PNP epitaxial planar transistor designed for low-frequency power amplification, DC-DC conversion, and stroboscope applications. It is packaged in a TO-92L-A1 case with dimensions of 5.9±0.2 mm in length, 4.9±0.2 mm in width, and 2.54±0.15 mm in lead spacing. The device has a collector-emitter voltage rating of −20 V, a collector current rating of −5 A, and a collector power dissipation of 1 W. The junction temperature is rated up to 150 °C. It complies with the RoHS Directive (EU 2002/95/EC).

Datasheet Summary
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The 2SB0873 series is a silicon PNP epitaxial planar transistor designed for low-frequency power amplification, DC-DC conversion, and stroboscope applications. It is packaged in a TO-92L-A1 case with dimensions of 5.9±0.2 mm in length, 4.9±0.2 mm in width, and 2.54±0.15 mm in lead spacing. The device has a collector-emitter voltage rating of −20 V, a collector current rating of −5 A, and a collector power dissipation of 1 W. The junction temperature is rated up to 150 °C. It complies with the RoHS Directive (EU 2002/95/EC).

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Single Bipolar Transistors - 2SB08730R-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SB08730R-ND
Single Bipolar Transistors 2SB08730R-ND
Bipolar (BJT) Transistor PNP 20V 5A 120MHz 1W Through Hole TO-92L-A1

Bipolar (BJT) Transistor PNP 20V 5A 120MHz 1W Through Hole TO-92L-A1

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 2SB08730R-ND
Product Name Single Bipolar Transistors
Polarity PNP
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