Panasonic Industry Europe GmbH Single Bipolar Transistors 2SA07940R

Description
Bipolar (BJT) Transistor PNP 100V 500mA 120MHz 1.2W Through Hole TO-126B-A1
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Description
Bipolar (BJT) Transistor PNP 100V 500mA 120MHz 1.2W Through Hole TO-126B-A1
Request a Quote
Datasheet
Datasheet Summary
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PNP silicon bipolar transistor for low-frequency output driver applications, in a TO-126B-A1 package with dimensions of 8.0 mm length, 5.0 mm width, and 3.2 mm height. It has a collector-emitter voltage rating of -100 V, collector current of -0.5 A, power dissipation of 1.2 W, and transition frequency of 120 MHz. The device has a forward current transfer ratio (hFE1) between 90 and 220, and complies with the RoHS Directive (EU 2002/95/EC).

Datasheet Summary
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PNP silicon bipolar transistor for low-frequency output driver applications, in a TO-126B-A1 package with dimensions of 8.0 mm length, 5.0 mm width, and 3.2 mm height. It has a collector-emitter voltage rating of -100 V, collector current of -0.5 A, power dissipation of 1.2 W, and transition frequency of 120 MHz. The device has a forward current transfer ratio (hFE1) between 90 and 220, and complies with the RoHS Directive (EU 2002/95/EC).

Suppliers

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Single Bipolar Transistors - 2SA07940R-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA07940R-ND
Single Bipolar Transistors 2SA07940R-ND
Bipolar (BJT) Transistor PNP 100V 500mA 120MHz 1.2W Through Hole TO-126B-A1

Bipolar (BJT) Transistor PNP 100V 500mA 120MHz 1.2W Through Hole TO-126B-A1

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 2SA07940R-ND
Product Name Single Bipolar Transistors
Polarity PNP
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