Panasonic Industry Europe GmbH Single Bipolar Transistors 2SA06830R

PNP silicon bipolar transistor for low-frequency power and driver amplification, housed in a TO-92L-A1 package with dimensions of 5.9±0.2 mm in length, 4.9±0.2 mm in width, and 2.54±0.15 mm lead spacing. It has a collector-base voltage rating of -30 V for the 2SA0683, a collector-emitter voltage of -25 V, and a collector current of -1 A. Power dissipation is rated at 1 W, with a transition frequency of 200 MHz and collector output capacitance of 20 to 30 pF. The device complies with the RoHS Directive (EU 2002/95/EC) and is complementary to the 2SC1383. Base-emitter saturation voltage ranges from -0.85 V to -1.20 V under specified conditions, and current gain (hFE) is ranked in bins of 85-170, 120-240, or 170-340. It is rated for operation within standard electronic equipment and meets JIS C 7030 measurement standards.