ODG (Origin Data Global) Transistors SE1003

Description
100V 3A 230mΩ@10V,1A 1.5W 1.8V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
  • Transistors - SE1003 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 3A 230mΩ@10V,1A 1.5W 1.8V@250uA 1 N-Channel SOT-23 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - SE1003 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SE1003
Transistors SE1003
100V 3A 230mΩ@10V,1A 1.5W 1.8V@250uA 1 N-Channel SOT-23 MOSFETs ROHS

100V 3A 230mΩ@10V,1A 1.5W 1.8V@250uA 1 N-Channel SOT-23 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SE1003
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Igbt, Module, Dual N Channel, 1.7Kv, 900A; Continuous Collector Current Fuji Electric - 54W0212 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, Module, Dual N Channel, 1.7Kv, 900A; Continuous Collector Current Fuji Electric
2MBI650VXA-170E-50
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type TO-3
View Details
45 V, 1 A PNP medium power transistors - BC51PA,115 - Nexperia B.V.
Nexperia B.V.
45 V, 1 A PNP medium power transistors
BC51PA,115
Specs
Package Type SOT1061 SOT1061
View Details
5 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R016M2H - AIMDQ75R016M2H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R016M2H
AIMDQ75R016M2H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
1150A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1150A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-D1K1
Specs
Transistor Type IGBT
View Details