ODG (Origin Data Global) Transistors RU30120S

Description
30V 120A 150W 4mΩ@10V,60A 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS
  • Transistors - RU30120S - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 120A 150W 4mΩ@10V,60A 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - RU30120S - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
RU30120S
Transistors RU30120S
30V 120A 150W 4mΩ@10V,60A 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

30V 120A 150W 4mΩ@10V,60A 3V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number RU30120S
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT; IGBT+FWD; Molded; TO-247 Case; 65A Collector; 200 W (Max.); 600V; +/-20V - 70212526 - Allied Electronics, Inc.
Fuji Electric Corp. of America
IGBT; IGBT+FWD; Molded; TO-247 Case; 65A Collector; 200 W (Max.); 600V; +/-20V
1MBK50D-060S
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type TO-247
View Details
60 V, 320 mA dual N-channel Trench MOSFET - 2N7002PS,115 - Nexperia B.V.
Nexperia B.V.
60 V, 320 mA dual N-channel Trench MOSFET
2N7002PS,115
Specs
Transistor Type MOSFET
Package Type SOT363-3 SOT363-3
View Details
7 suppliers
- 1ED3120MU12HXUMA1 - Rochester Electronics
Infineon Technologies AG
1ED3120MU12HXUMA1
Specs
Transistor Type MOSFET; IGBT
Package Type SO-8; PG-DSO-8
View Details
650A Igbt Module For One Phase 400/480V - SK-H1-QOUT-D650 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
650A Igbt Module For One Phase 400/480V
SK-H1-QOUT-D650
Specs
Transistor Type IGBT
View Details