ODG (Origin Data Global) Transistors HCD65R360

Description
650V 11A 340mΩ@10V,5.5A 91W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - HCD65R360 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
650V 11A 340mΩ@10V,5.5A 91W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - HCD65R360 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HCD65R360
Transistors HCD65R360
650V 11A 340mΩ@10V,5.5A 91W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS

650V 11A 340mΩ@10V,5.5A 91W 4V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HCD65R360
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-05 - Qorvo
Qorvo
DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details
4 suppliers
2-Channel SAB PCB with one mounted ALD910021SALI - SABMB221 - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
2-Channel SAB PCB with one mounted ALD910021SALI
SABMB221
View Details
IGBT Module - 21666081 - Radwell International
Fuji Electric Corp. of America
IGBT Module
7MBR30SA-060-50
Specs
Transistor Type IGBT
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1319S-AA - 855027-2SA1319S-AA - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1319S-AA
2SA1319S-AA
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details