The EPC2037 is an enhancement mode gallium nitride power FET in passivated die form with solder bumps, designed for high-efficiency switching applications such as DC-DC conversion, wireless power transfer, and lidar. It has a 100 V drain-to-source voltage rating and a maximum continuous drain current of 1.7 A at 25°C. The die measures 0.9 mm × 0.9 mm, with a typical on-resistance of 550 mΩ at 25°C and a gate threshold voltage ranging from 0.8 V to 2.5 V. The device features ultra-low gate charge (115 to 145 pC) and zero reverse recovery charge, enabling high-frequency operation. Thermal resistance is 14 °C/W junction-to-case and 79 °C/W junction-to-board. It operates from -40°C to 150°C junction temperature and is compliant with MSL 1 moisture sensitivity level per IPC/JEDEC standards.
GANFET N-CH 100V 1.7A DIE
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EPC2037 |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | GaNFET (Gallium Nitride) |
| V(BR)DSS | 100 volts |
