The ASI BLW50F is an NPN silicon RF power transistor designed for HF and VHF transmitter applications up to 30 MHz. It is packaged in a 4-lead flag-style case with a junction-to-case thermal resistance of 2.0 °C/W. The device supports a maximum collector current of 3.25 A, collector-emitter voltage of 55 V, and power dissipation of 87 W at 25 °C. It delivers a minimum power gain of 14 dB at 75 W PEP output and exhibits a maximum third-order intermodulation distortion of 50 dBc under the same conditions. The transistor operates over a junction temperature range of -65 °C to +200 °C and a storage temperature range of -65 °C to +150 °C.
RF Bipolar Transistors RF Transistor
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Transistors |
| Product Number | BLW50F |
| Product Name | Transistors |
