onsemi TRANSISTORS - Transistors (BJT) - Arrays - UMZ1NT1G UMZ1NT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 120363-UMZ1NT1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 114MHz, 142MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 2μA Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 120363-UMZ1NT1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 114MHz, 142MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 2μA Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Arrays - UMZ1NT1G - 120363-UMZ1NT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - UMZ1NT1G
120363-UMZ1NT1G
TRANSISTORS - Transistors (BJT) - Arrays - UMZ1NT1G 120363-UMZ1NT1G
Manufacturer: ON Semiconductor Win Source Part Number: 120363-UMZ1NT1G Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 114MHz, 142MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-88/SC70-6/SOT-363 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 2μA Typical Gain (hFE) (Min): 200 @ 2mA, 6V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 120363-UMZ1NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 114MHz, 142MHz
Transistor Polarity: NPN, PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Collector Cut-off Current(Max): 2μA
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Logic Level Translators
Product Number 120363-UMZ1NT1G
Product Name TRANSISTORS - Transistors (BJT) - Arrays - UMZ1NT1G
Operating Temperature -55 to 150 C (-67 to 302 F)
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