onsemi Bipolar Transistor Arrays, Pre-Biased UMA4NT1

Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SC-88A (SC-70-5/SOT-353)
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Description
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SC-88A (SC-70-5/SOT-353)
Request a Quote Datasheet

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Product
Description
Supplier Links
Bipolar Transistor Arrays, Pre-Biased - UMA4NT1OS-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
UMA4NT1OS-ND
Bipolar Transistor Arrays, Pre-Biased UMA4NT1OS-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SC-88A (SC-70-5/SOT-353)

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SC-88A (SC-70-5/SOT-353)

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMA4NT1 - 103055-UMA4NT1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMA4NT1
103055-UMA4NT1
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMA4NT1 103055-UMA4NT1
Manufacturer: ON Semiconductor Win Source Part Number: 103055-UMA4NT1 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SC-88A (SC-70-5 / SOT-353) Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 160 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 103055-UMA4NT1
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SC-88A (SC-70-5 / SOT-353)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 160 @ 5mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UMA4NT1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UMA4NT1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UMA4NT1
TRANS 2PNP PREBIAS 0.15W SC70

TRANS 2PNP PREBIAS 0.15W SC70

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number UMA4NT1OS-ND 103055-UMA4NT1 UMA4NT1
Product Name Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UMA4NT1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; 2 PNP - Pre-Biased (Dual)
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