onsemi Single FETs, MOSFETs UJ3C120150K3S

The UJ3C120150K3S is a silicon carbide cascode JFET power device in a TO247-3 package measuring 15.90x20.96x5.03 mm, designed for high-efficiency switching applications such as EV charging, PV inverters, and motor drives. It features a 1200 V drain-source voltage rating, a typical on-resistance of 150 mΩ at 25°C, and a maximum operating junction temperature of 175°C. The device exhibits low gate charge (30 nC), low reverse recovery charge (63 nC), and is RoHS compliant. It is protected against ESD with HBM Class 2 and includes thermal resistance from junction to case rated at 0.7 to 0.9 °C/W.