onsemi Single FETs, MOSFETs UF4C120070K4S

The UF4C120070K4S is a 1200 V, 72 mΩ cascode SiC FET in a TO-247-4 package, designed for high-efficiency switching in applications such as EV charging, PV inverters, and motor drives. It features a maximum junction temperature of 175 °C, a gate threshold voltage of 4.8 V (typical), and a total gate charge of 37.8 nC. The device exhibits low reverse recovery charge of 119 nC and a forward diode voltage of 1.43 V at 25 °C. The TO-247-4 case measures 15.90 x 20.96 x 5.03 mm. The device is RoHS compliant, ESD protected (HBM Class 2, CDM Class C3), and rated for continuous drain current of 27.5 A at 25 °C. Thermal resistance from junction to case is 0.53 to 0.69 °C/W.